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K4E661612D Key Features

  • w i d t h , l o w p o w e r c o n s u m p t i o n a n d h i g h r e l i a b i l i t y
  • Part Identification
  • K4E661612D-TI/P(3.3V, 8K Ref.)
  • K4E641612D-TI/P(3.3V, 4K Ref.)
  • R A S-only and Hidden refresh capability
  • Fast parallel test mode capability
  • Self-refresh capability (L-ver only)
  • LVTTL(3.3V) patible inputs and outputs
  • Early Write or output enable controlled write
  • JEDEC Standard pinout

Related Samsung Semiconductor Datasheets

Part Number Description
K4E661612B 4M x 16bit CMOS Dynamic RAM
K4E661612C 4M x 16bit CMOS Dynamic RAM
K4E660412D 16M x 4bit CMOS Dynamic RAM
K4E660812B 8M x 8bit CMOS Dynamic RAM
K4E660812C 8M x 8bit CMOS Dynamic RAM

K4E661612D Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. or 8K Ref.), access time (-45, -50 or -60), power consumption( Normal or Low power) are optional.