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K4E661612D - CMOS DRAM

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Samsung

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K4E661612D CMOS DRAM by Samsung - Datasheet Preview — Datasheet preview – K4E661612D

Datasheet Details

Part number	K4E661612D
Manufacturer	Samsung
File Size	397.47 KB
Description	CMOS DRAM
Datasheet	K4E661612D Datasheet
Additional preview pages of the K4E661612D datasheet.

Product details

Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.

Features

of this family. All of this family have C A S -before-R A S refresh, R A S -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated u s i n g S a m s u n g ′s a d v a n c e d C M O S p r o c e s s t o r e a l i z e h i g h b a n d - w i d t h , l o w p o w e r c o n s u m p t i o n a n d h i g h r e l i a b i l i t y.

📁 Similar Datasheet

K4E660412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM (Samsung semiconductor)
K4E660812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out (Samsung semiconductor)
K4E640412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM (Samsung semiconductor)
K4E640812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out (Samsung semiconductor)

Other Datasheets by Samsung

K4E661612B - 4M x 16bit CMOS Dynamic RAM
K4E661612C - 4M x 16bit CMOS Dynamic RAM
K4E660412D - 16M x 4bit CMOS Dynamic RAM
K4E660812B - 8M x 8bit CMOS Dynamic RAM
K4E660812C - 8M x 8bit CMOS Dynamic RAM
K4E640412D - 16M x 4bit CMOS Dynamic RAM

Published: Apr 25, 2005 |