• Part: K7P403622B
  • Description: SRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 277.23 KB
Download K7P403622B Datasheet PDF
Samsung Semiconductor
K7P403622B
K7P403622B is SRAM manufactured by Samsung Semiconductor.
FEATURES - 128Kx36 or 256Kx18 Organizations. - 3.3V VDD, 2.5/3.3V VDDQ. - LVTTL Input and Output Levels. - Differential, PECL clock / Single ended or differential LVTTL clock Inputs - Synchronous Read and Write Operation. - Registered Input and Registered Output. - Internal Pipeline Latches to Support Late Write. - Byte Write Capability(four byte write selects, one for each 9bits) - Synchronous or Asynchronous Output Enable. - Power Down Mode via ZZ Signal. - JTAG Boundary Scan (subset of IEEE std. 1149.1). - 119(7x17)Pin Ball Grid Array Package(14mmx22mm). Organization Part Number 128Kx36 128Kx36 128Kx36 256Kx18 256Kx18 256Kx18 K7P403622B-HC25 K7P403622B-HC20 K7P403622B-HC16 K7P401822B-HC25 K7P401822B-HC20 K7P401822B-HC16 Maximum Access Frequency Time 250MHz 200MHz 166MHz 250MHz 200MHz 166MHz FUNCTIONAL BLOCK DIAGRAM SA[0:16] or [0:17] K,K Clock Buffer Read Address Register 17 or 18 Write Address Register 17 or 18 2:1...