K7P403622M - SRAM

Product Overview

Samsung

Datasheet Details

Part number	K7P403622M
Manufacturer	Samsung
File Size	346.80 KB
Description	SRAM
Datasheet	K7P403622M Datasheet
Additional preview pages of the K7P403622M datasheet.

Product details

Description

Pin Name K, K SAn DQn SW SWa SWb SWc SWd ZZ VDD Pin Description Differential Clocks Synchronous Address Input Bi-directional Data Bus Synchronous Global Write Enable Synchronous Byte a Write Enable Synchronous Byte b Write Enable Synchronous Byte c Write Enable Synchronous Byte d Write Enable Asynchronous Power Down Core Power Supply Pin Name VDDQ M1, M2 G SS TCK TMS TDI TDO VSS NC Pin Description Output Power Supply Read Protocol Mode Pins ( M1=VSS, M2=VDD ) Asynchronous Output Enable Synch

Features

128Kx36 or 256Kx18 Organizations.
3.3V Core Power Supply.
LVTTL Input and Output Levels.
Differential, PECL Clock Inputs K, K.
Synchronous Read and Write Operation.
Registered Input and Registered Output.
Internal Pipeline Latches to Support Late Write.
Byte Write Capability(four byte write selects, one for each 9bits).
Synchronous or Asynchronous Output Enable.
Power Down Mode via ZZ Signal.

📁 Similar Datasheet

K7P403623B - 128Kx36 & 256Kx18 SRAM (Samsung semiconductor)
K7P401823B - 128Kx36 & 256Kx18 SRAM (Samsung semiconductor)
K7P161866A - (K7P161866A / K7P163866A) 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM (Samsung semiconductor)
K7P163866A - (K7P161866A / K7P163866A) 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM (Samsung semiconductor)
K7P321866M - 1Mx36 & 2Mx18 SRAM (Samsung semiconductor)
K7P321874C - 1Mx36 & 2Mx18 SRAM (Samsung Electronics)
K7P321888M - 1Mx36 & 2Mx18 SRAM (Samsung Electronics)
K7P323666M - 1Mx36 & 2Mx18 SRAM (Samsung semiconductor)

Other Datasheets by Samsung

Published: Sep 12, 2018 |