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SW8N65D - N-channel MOSFET

Description

1.

Gate 2.

Drain 3.

Features

  • TO-220 TO-251 TO-252 TO-220F TO-251NX.
  • High ruggedness.
  • Low RDS(ON) (Typ 1.1Ω)@VGS=10V.
  • Low Gate Charge (Typ 32nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12.

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Datasheet Details

Part number SW8N65D
Manufacturer Samwin
File Size 1.14 MB
Description N-channel MOSFET
Datasheet download datasheet SW8N65D Datasheet
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Full PDF Text Transcription

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SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET Features TO-220 TO-251 TO-252 TO-220F TO-251NX  High ruggedness  Low RDS(ON) (Typ 1.1Ω)@VGS=10V  Low Gate Charge (Typ 32nC)  Improved dv/dt Capability  100% Avalanche Tested 12  Application:Charger,LED,PC Power 3 12 3 12 3 12 3 12 3 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 650V ID : 8A RDS(ON) : 1.
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