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SW8N65DB - N-channel MOSFET

Description

1.

Gate 2.

Drain 3.

Features

  • TO-251 TO-252 TO-220F TO-262N.
  • High ruggedness.
  • Low RDS(ON) (Typ 1.0Ω)@VGS=10V.
  • Low Gate Charge (Typ 34nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 1.

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Datasheet Details

Part number SW8N65DB
Manufacturer Samwin
File Size 0.96 MB
Description N-channel MOSFET
Datasheet download datasheet SW8N65DB Datasheet
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SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features TO-251 TO-252 TO-220F TO-262N ⚫ High ruggedness ⚫ Low RDS(ON) (Typ 1.0Ω)@VGS=10V ⚫ Low Gate Charge (Typ 34nC) ⚫ Improved dv/dt Capability ⚫ 100% Avalanche Tested 1 ⚫ Application:LED, Charger, PC Power 2 3 1 2 3 1 2 3 1 2 3 BVDSS : 650V ID : 8A RDS(ON) : 1.0Ω 2 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including Fast switching time, low on resistance, low gate charge and especially excellent Avalanche characteristics.
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