SW8N65K Description
This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW8N65K Key Features
- High ruggedness
- Low RDS(ON) (Typ 0.53Ω)@VGS=10V
- Low Gate Charge (Typ 20nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:LED,Charger,PC Power