Datasheet Details
| Part number | SW8N65K |
|---|---|
| Manufacturer | Samwin |
| File Size | 675.97 KB |
| Description | N-channel MOSFET |
| Download | SW8N65K Download (PDF) |
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Overview: SW8N65K N-channel Enhanced mode TO-262 MOSFET.
| Part number | SW8N65K |
|---|---|
| Manufacturer | Samwin |
| File Size | 675.97 KB |
| Description | N-channel MOSFET |
| Download | SW8N65K Download (PDF) |
|
|
|
This power MOSFET is produced with advanced super junction technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes BVDSS : 650V ID : 8A RDS(ON) : 0.53Ω 2 1 3 Item Sales Type Marking 1 SW U 8N65K SW8N65K Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy MOSFET dv/dt ruggedness (@VDS=0~400V) (note 1) (note 2) (note 1) dv/dt PD Peak diode recovery dv/dt Total power dissipation (@TC=25oC) Derating factor above 25oC (note 3) TSTG, TJ TL Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds.
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