• Part: 2SA1683
  • Description: PNP Epitaxial Planar Silicon Transistors
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 40.01 KB
Download 2SA1683 Datasheet PDF
SANYO
2SA1683
Features - Adoption of FBET process. - High breakdown voltage : VCEO>80V. Package Dimensions unit:mm 2033A [2SA1683/2SC4414] 4.0 2.2 1.8 3.0 0.4 0.5 0.4 0.4 ( ) : 2SA1683 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C 123 1.3 1.3 0.7 0.7 Conditions 3.0 3.8 Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO h FE1 h FE2 f T VCB=(- )60V, IE=0 VEB=(- )4V, IC=0 VCE=(- )5V, IC=(- )50m A VCE=(- )5V, IC=(- )400m A VCE=(- )10V, IC=(- )10m A - : 2SA1683/2SC4414 are classified by 50m A h FE as follows : Rank T h FE 100 to 200 140 to 280 200 to 400 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings (-...