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2SA1688 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • High power gain : PG=22dB typ (f=100MHz).
  • Ultrasmall-sized package permitting 2SA1688- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SA1688] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 Specifications Absolute Maximum Ratings at Ta = 25˚C 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Ju.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN2798A PNP Epitaxial Planar Silicon Transistors 2SA1688 High-Frequency General-Purpose Amplifier Applications Applications · Ideally suited for use in FM RF amplifiers, mixers, oscillators. converters, and IF amplifiers. Features · High power gain : PG=22dB typ (f=100MHz). · Ultrasmall-sized package permitting 2SA1688- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SA1688] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.