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2SA1687 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Ultrasmall-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim.
  • High VEBO. Package Dimensions unit:mm 2059B [2SA1687/2SC4446] 0.425 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 ( ) : 2SA1687 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Ju.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features · Ultrasmall-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim. · High VEBO. Package Dimensions unit:mm 2059B [2SA1687/2SC4446] 0.425 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.