• Part: 2SA1689
  • Description: PNP Epitaxial Planar Silicon Transistors
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 29.40 KB
Download 2SA1689 Datasheet PDF
SANYO
2SA1689
Features - High breakdown voltage. - Small reverse transfer capacitance and excellent high frequency characteristic. - Excellent DC current gain. - Adoption of FBET process. Package Dimensions unit:mm 2003B [2SA1689] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain h FE1 h FE2 Gain-Bandwidth Product f T - : The 2SA1689 is classified by 0.1m A h FE as follows : Rank F h FE 100 to 200 160 to 320 VCB=- 200V, IE=0 VEB=- 4V, IC=0 VCE=- 6V, IC=- 0.1m A VCE=- 6V, IC=- 1m A VCE=- 30V, IC=- 10m A JEDEC : TO-92 1 : Emitter 1.3 1.3 EIAJ : SC-43...