• Part: 2SC3184
  • Description: NPN Triple Diffused Planar Silicon Transistor
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 96.89 KB
Download 2SC3184 Datasheet PDF
SANYO
2SC3184
Features - High breakdown voltage (VCBO≥900V). - Fast switching speed. - Wide ASO. Package Dimensions unit:mm 2010C [2SC3184] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions PW≤300µs, Duty Cycle≤10% Tc=25˚C Ratings 900 800 7 0.5 2 30 150 - 55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance ICBO IEBO h FE1 h FE2 VCE(sat) f T Cob VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=60m A VCE=5V, IC=300m A IC=300m A, IB=60m A VCE=10V, IC=60m A VCB=10V, f=1MHz 10- 8 15...