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2SC4221 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • High breakdown voltage, high reliability.
  • Fast switching speed (tf=0.1µs typ).
  • Wide ASO.
  • Adoption of MBIT process.
  • Suitable for sets whose height is restricted. Package Dimensions unit:mm 2049C [2SC4221] 10.2 0.9 4.5 1.3 11.5 20.9 1.6 1.2 9.4 0.8 11.0 8.8 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2816B NPN Triple Diffused Planar Silicon Transistor 2SC4221 500V/3A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Suitable for sets whose height is restricted. Package Dimensions unit:mm 2049C [2SC4221] 10.2 0.9 4.5 1.3 11.5 20.9 1.6 1.2 9.4 0.8 11.0 8.8 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C PW≤300µs, duty cycle≤10% 2.55 2.