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2SC5503 - NPN TRANSISTOR

Key Features

  • Low noise : NF=1.2dB typ (f=1GHz).
  • High gain : S21e2=15dB typ (f=1GHz).
  • High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2161 [2SC5503] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 0.65 0.5 2.0 0.425 1.25 2.1 0 to 0.1 0.2 0.15 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO.

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Other Datasheets by SANYO (now Panasonic)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=15dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2161 [2SC5503] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 0.65 0.5 2.0 0.425 1.25 2.1 0 to 0.1 0.2 0.15 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 0.7 0.9 Ratings 16 8 1.