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2SC5808 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • Package Dimensions unit : mm 2045B [2SC5808] 6.5 5.0 4 High breakdown voltage. High speed switching. Wide ASO. Adoption of MBIT process. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 Package Dimensions unit : mm 2044B [2SC5808] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 0.8 1 0.6 2 3 2.5 1.2 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collec.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Features • • • • Package Dimensions unit : mm 2045B [2SC5808] 6.5 5.0 4 High breakdown voltage. High speed switching. Wide ASO. Adoption of MBIT process. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 Package Dimensions unit : mm 2044B [2SC5808] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 0.8 1 0.6 2 3 2.5 1.2 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.