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2SC5832 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • High DC current gain. Wide ASO. On-chip zener diode of 65±10V between collector and base. Uniformity in collector-to-base voltage. Large inductive load handling capability. 6.5 5.0 4 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 1 2 3 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit : mm 2044B [2SC5832] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.8 0.5 2 3 2.5 1.2 1.2 0 to 0.2 1 : Base 2 : Collecto.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7287 2SC5832 NPN Epitaxial Planar Silicon Transistor www.DataSheet4U.com 2SC5832 Driver Applications Applications • Package Dimensions unit : mm 2045B [2SC5832] 1.5 Suitable for use in switching of inductive load (motor drivers, printer hammer drivers, relay drivers). Features • • • • • High DC current gain. Wide ASO. On-chip zener diode of 65±10V between collector and base. Uniformity in collector-to-base voltage. Large inductive load handling capability. 6.5 5.0 4 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 1 2 3 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit : mm 2044B [2SC5832] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.8 0.5 2 3 2.5 1.2 1.2 0 to 0.