2SC5887
Features
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Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
3.5 7.2
1.6 1.2 0.75
2.4 0.7
1 2 3 2.55
Specifications
( ) : 2SA2098 Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
Ratings (--50)60 (--)50 (--)6 (--)15 (--)20 (--)3 2 30 150 --55 to +150
Unit V V V A A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO h FE f T Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(--)1A VCE=(--)10V, IC=(--)1A Ratings min typ max (--)10...
