• Part: 2SC5889
  • Description: NPN Epitaxial Planar Silicon Transistors
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 55.96 KB
Download 2SC5889 Datasheet PDF
SANYO
2SC5889
Features - - - - - Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.4 0.5 1.8 15.0 1 2 1.3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings 15 10 7 5 9 1 0.55 150 --55 to +150 Unit V V V A A A W °C °C .. 3.0 3.8nom Conditions Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical...