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2SC5831 - NPN Transistor

Key Features

  • High DC current gain. Wide ASO. On-chip zener diode of 65±10V between collector and base. Uniformity in collector-to-base voltage. Large inductive load handling capability. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 1 : Emitter 2 : Collector 3 : Base 1.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Curr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7261 2SC5831 NPN Epitaxial Planar Silicon Transistor www.DataSheet4U.com 2SC5831 Driver Applications Preliminary Applications • Package Dimensions unit : mm 2042B 8.0 1.0 1.4 Suitable for use in switching of inductive load (motor drivers, printer hammer drivers, relay drivers). [2SC5831] 4.0 1.0 3.3 Features • • • • • High DC current gain. Wide ASO. On-chip zener diode of 65±10V between collector and base. Uniformity in collector-to-base voltage. Large inductive load handling capability. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 1 : Emitter 2 : Collector 3 : Base 1.