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2SC5951 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • Package Dimensions unit : mm 2042B [2SC5951] 8.0 1.0 1.4 4.0 1.0 3.3 High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature S.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7667 2SC5951 NPN Triple Diffused Planar Silicon Transistor 2SC5951 Switching Regulator Applications Features • • • • Package Dimensions unit : mm 2042B [2SC5951] 8.0 1.0 1.4 4.0 1.0 3.3 High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions 4.8 1.7 Specifications 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML Ratings 700 400 8 1.