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2SC5957 - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • Package Dimensions unit : mm 2010C [2SC5957] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperatu.

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www.DataSheet4U.com Ordering number : ENN7613 2SC5957 NPN Triple Diffused Planar Silicon Transistor 2SC5957 Switching Regulator Applications Features • • • • Package Dimensions unit : mm 2010C [2SC5957] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions 2.55 2.55 2.