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Ordering number : ENA0152
2SC5957M
2SC5957M
Features
• • • •
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions Ratings 500 400 7 10 20 3.5 1.