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2SD1620 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.
  • Large current capacity and highly resistant to breakdown.
  • Excellent linearity of hFE in the region from low current to high current.
  • Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs. Package Dimensions unit:mm 2038A [2SD1620] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Co.

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Ordering number:EN1719B NPN Epitaxial Planar Silicon Transistor 2SD1620 1.5V, 3V Strobe Applications Features · Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. · Large current capacity and highly resistant to breakdown. · Excellent linearity of hFE in the region from low current to high current. · Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs. Package Dimensions unit:mm 2038A [2SD1620] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.