Datasheet4U Logo Datasheet4U.com

2SK4209 - N-Channel Silicon MOSFET

Datasheet Summary

Features

  • N-Channel Silicon MOSFET General-Purpose Switching Device.

📥 Download Datasheet

Datasheet preview – 2SK4209

Datasheet Details

Part number 2SK4209
Manufacturer Sanyo Semicon Device
File Size 178.37 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet 2SK4209 Datasheet
Additional preview pages of the 2SK4209 datasheet.

📁 Similar Datasheet

  • 2SK420 - Silicon N-Channel MOSFET (Toshiba)
  • 2SK4200LS - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK4201 - N-CHANNEL POWER MOSFET (Renesas)
  • 2SK4201 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK4202 - N-CHANNEL POWER MOSFET (Renesas)
  • 2SK4202 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK4203LS - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK4204LS - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK4207 - MOSFET (Toshiba Semiconductor)
  • 2SK4207 - N-Channel MOSFET (INCHANGE)
Other Datasheets by Sanyo Semicon Device

Full PDF Text Transcription

Click to expand full text
Ordering number : ENA1516 2SK4209 SANYO Semiconductors DATA SHEET 2SK4209 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 800 ±30 12 24 2.
Published: |