FC150 Datasheet | SANYO

Features - posite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. - The FC150 is formed with two chips, being equivalent to the 2SA1813/2SC4413, placed in one package. - Adoption of FBET process. - High DC current gain. - Hgih VEBO. Electrical Connection Package Dimensions unit:mm 2067 [FC150] E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 SANYO:CP6 TR1=PNP TR2=NPN Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1 unit Conditions Ratings (- 30)60 (- 25)50 (- )15 (- 150)100 (- 300)200 (- 30)20 200 300 150 - 55 to +150 Unit V V V m A m A m A m W m W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO h FE f T Cob VCE(sat) VBE(sat) Conditons VCB=(- 20V)40V, IE=0 VEB=(- )10V, IC=0 VCE=(- )5V, IC=(- )1m A VCE=(- )10V, IC=(- )10m A VCB=(- )10V, f=1MHz IC=(- )50m A, IB=(- )1m A IC=(- )50m A, IB=(- )1m A (- 30)60 (- 25)50 (- )15 (500)800 (210)200 (2.6)1.5 (- 0.15)0.1 (- 0.78)0.8 (- )0.3 (- )1.1 Ratings min typ max - 0.1 - 0.1 (800)1500 (1200)3200 MHz p F V V V V V Unit µA µA V(BR)CBO IC=(- )10µA, IE=0 V(BR)CEO IC=(- )1m A, RBE=∞ V(BR)EBO IC=(- )10µA, IC=0 Note:The specifications shown above are for each individual transistor. ( ):PNP Marking:150 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/12094TH (KOTO) 8-7600 No.3965-1/4 No.3965-2/4 No.3965-3/4 No products described or contained...