FC151 Datasheet | SANYO

Features - posite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. - The FC151 is formed with two chips, being equivalent to the 2SA1669, placed in one package. - Excellent in thermal equilibrium and pair capability. Electrical Connection 1:Emitter 1 2:Base 1 3:Emitter 2 4:Collector 2 5:Base 2 6:Collector1 SANYO:CP6 Package Dimensions unit:mm 2103A [FC151] 1:Emitter 1 2:Base 1 3:Emitter 2 4:Collector 2 5:Base 2 6:Collector1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg 1 unit Conditions Ratings - 20 - 15 - 3 - 50 200 300 150 - 55 to +150 Unit V V V m A m W m W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio B-E Voltage Difference Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO VCB=- 15V, IE=0 VEB=- 2V, IE=0 20 0.7 0.93 3.0 1.5 5 2.0 3.0 1.0 1.5 15 m V GHz p F d B d B Conditons Ratings min typ max - 0.1 - 0.1 100 Unit µA µA h FE VCE=- 10V, IC=- 5m A h FE(small/ VCE=- 10V, IC=- 5m A large) VBE(large- VCE=- 10V, IC=- 5m A small) f T Cob | S21e | NF VCE=- 10V, IC=- 5m A VCB=- 10V, f=1MHz VCE=- 10V, IC=- 5m A, f=0.9GHz VCE=- 10V, IC=- 3m A, f=0.9GHz Note:The specifications shown above are for each individual transistor. However, the specifications of h FE(small/large) and h FE(large-small) are for pair capability Marking:151 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/41594TH(KOTO) X-7850 No.4652-1/5 No.4652-2/5 No.4652-3/5 No.4652-4/5 No products described or contained herein are intended for use in surgical implants, life-support...