FC154 Datasheet | SANYO

Features - posite type with NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly. - The FC154 is formed with two chips, being equivalent to the 2SC4270 and the other the 2SA1699, placed in one package. Electrical Connection 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 SANYO:CP6 Package Dimensions unit:mm 2104A [FC154] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR1 (NPN Tr)] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation [TR2 (PNPTr)] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation [mon Ratings] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg 300 150 - 55 to +150 m W ˚C ˚C VCBO VCEO VEBO IC PC - 20 - 15 - 3 - 50 200 V V V m A m W VCBO VCEO VEBO IC PC 25 15 3 50 200 V V V m A m W Symbol Conditions Ratings Unit Marking:154 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/71095MO (KOTO) TA-0144 No.5099-1/7 Continued from Preceding page. Electrical Characteristics at Ta = 25˚C Parameter [TR1 (NPN Tr)] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Power Gain Noise Figure [TR2 (PNPTr)] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure ICBO IEBO h FE f T Cob VCB=- 15V, IE=0 VEB=- 2V, IC=0 VCE=- 10V, IC=- 5m A VCE=- 10V, IC=- 5m A VCB=- 10V, f=1MHz VCE=- 10V, IC=- 5m A, f=0.9GHz VCE=- 10V, IC=- 3m A, f=0.9GHz 20 1.5 5 2.0 3.0 1.0 1.5 - 0.1 - 0.1 100 GHz p F d B d B µA µA ICBO IEBO h FE f T Cob PG NF VCB=20V, IE=0 VEB=2V, IC=0 VCE=10V, IC=5m A VCE=10V, IC=10m A VCB=10V, f=1MHz...