FC152
FC152 is PNP Transistor manufactured by SANYO.
Features
- posite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
- The FC152 is formed with two chips, being equivalent to the 2SC4270, placed in one package.
- Excellent in thermal equilibrium, pair capability and especially suited for differerntial amp.
Package Dimensions unit:mm 2104A
[FC152]
1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1
1:Emitter 1 2:Base 1 3:Base 2 4:Collector 2 5:Emitter 2 6:Collector 1 SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg 1 unit Conditions Ratings 25 15 3 50 200 300 150
- 55 to +150 Unit V V V m A m W m W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio B-E Voltage Difference Gain-Bnadwidth Product Output Capacitance Power Gain Noise Figure Symbol ICBO IEBO h FE VCB=20V, IE=0 VEB=2V, IC=0 VCE=10V, IC=5m A 60 0.7 0.95 3.0 1.5 3.0 0.7 12 3.0 1.0 10 m V GHz p F d B d B Conditons Ratings min typ max 0.1 10 200 Unit µA µA h FE(small/ VCE=10V, IC=5m A large) VBE(large- VCE=10V, IC=0 small) f T VCE=10V, IC=10m A Cob VCB=10V, f=1MHz PG NF VCE=10V, IC=10m A, f=0.9GHz VCE=10V, IC=3m A, f=0.9GHz
Note:The specifications shown above are for each individual transistor. However, the specifications of h FE(small/large) and VBE(large-small) are for pair capability Marking:152
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH (KOTO) X-7851 No.4653-1/4
No.4653-2/4
No.4653-3/4
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear...
