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FTD1011 - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2155A [FTD1011] 0.65 0.425 Low ON-resistance. 2.5V drive. Mount height of 1.1mm. Composite type, facilitating high-density mounting. 8 5 0.5 4.5 6.4 0.95 3.0 1 0.25 4 (0.95) 0.125 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6593 FTD1011 P-Channel Silicon MOSFET FTD1011 Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions unit : mm 2155A [FTD1011] 0.65 0.425 Low ON-resistance. 2.5V drive. Mount height of 1.1mm. Composite type, facilitating high-density mounting. 8 5 0.5 4.5 6.4 0.95 3.0 1 0.25 4 (0.95) 0.125 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.