FTD1029 - P-Channel Silicon MOSFET

Datasheet Summary

Features

General-Purpose Switching Device.

Sanyo Semicon Device

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Datasheet Details

Part number	FTD1029
Manufacturer	Sanyo Semicon Device
File Size	62.66 KB
Description	P-Channel Silicon MOSFET
Datasheet	FTD1029 Datasheet
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Ordering number : ENA0532 FTD1029 www.DataSheet4U.com SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET FTD1029 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings --30 ±20 --3 --15 0.8 1.

Published: Aug 30, 2010 |