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FTD1012 - Load Switching Applications

Key Features

  • Package Dimensions unit : mm 2155A [FTD1012] 0.65 8 5 0.5 4.5 6.4 0.95 Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 3.0 0.425 1 0.25 4 (0.95) 1.0 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 0.125 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7000 FTD1012 P-Channel Silicon MOSFET FTD1012 Load Switching Applications Features • • • • Package Dimensions unit : mm 2155A [FTD1012] 0.65 8 5 0.5 4.5 6.4 0.95 Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 3.0 0.425 1 0.25 4 (0.95) 1.0 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 0.125 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.1 Ratings Unit --30 ± 20 --3 -15 0.8 1.