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Ordering number : EN8741
FTD1028
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SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
FTD1028
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm) 1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings --20 ±10 --3 --15 0.8 1.