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FW359 - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions 4.4 6.0 0.2 0.3 5.0 0.43.
  • The FW359 in corporates a N-channel MOSFET unit : mm and a P-channel MOSFET that feature 2129 low ON-resistance, ultrahigh-speed switching, and 4V drive, thereby enabling high-density mounting. 8 Excellent ON-resistance characteristic. [FW359] 5 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW=10s) Drain Current (PW=100ms) Drain Current (Pulse).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7549 FW359 N-Channel and P-Channel Silicon MOSFETs FW359 Ultrahigh-Speed Switching Applications Features • Package Dimensions 4.4 6.0 0.2 0.3 5.0 0.43 • The FW359 in corporates a N-channel MOSFET unit : mm and a P-channel MOSFET that feature 2129 low ON-resistance, ultrahigh-speed switching, and 4V drive, thereby enabling high-density mounting. 8 Excellent ON-resistance characteristic. [FW359] 5 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW=10s) Drain Current (PW=100ms) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg duty cycle≤1% duty cycle≤1% 0.595 1.27 0.1 Specifications 1.5 1.