2SC4548 Datasheet PDF

FEATURES

● High breakdown votlage.
● Adoption of MBIT process.
● Excellent hFE linearlity. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver

APPLICATIONS

Package Dimensions unit:mm 2038A [2SA1740/2SC4548] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 3 1.5 2 3.0 1 0.75 ( ) : 2SA1740 Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on ceramic board (250mm2×0.8mm) 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Ratings (–)400 (–)400 (–)5 (–)200 (–)400 1.3 150 –55 to +150 Unit V V V mA mA W ˚C ˚C

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)300V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC...