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Ordering number : ENN7179A
Preliminary Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
2SJ615
P-Channel Silicon MOSFET
2SJ615
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm 2062A
[2SJ615] 4.5 1.6
1.5
1.0 2.5 4.25max
Specifications
Absolute Maximum Ratings at Ta=25°C
0.4 0.5
32 1.5
1
3.0
(Bottom view)
0.75
0.4
1 : Gate 2 : Drain 3 : Source
SANYO : PCP
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
Channel Temperature Storage Temperature
PD
Tch Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C
Ratings --30 ±20 --2.5 --10 1.0 3.