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2SJ616 - P-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7270A Preliminary Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2SJ616 P-Channel Silicon MOSFET 2SJ616 Ultrahigh-Speed Switching Applications Package Dimensions unit : mm 2062A [2SJ616] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications Absolute Maximum Ratings at Ta=25°C 0.4 0.5 3 21 1.5 3.0 (Bottom view) 0.75 0.4 1 : Gate 2 : Drain 3 : Source SANYO : PCP Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.