LC35V1000BM - Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM

Product Overview

Sanyo

Part number	LC35V1000BM
Manufacturer	Sanyo
File Size	178.33 KB
Description	Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM
Datasheet	LC35V1000BM Datasheet
Additional preview pages of the LC35V1000BM datasheet.

Low-voltage operation: 3.0 to 3.6 V.
Wide operating temperature range:.
40 to +85°C.
Access time: 70 ns (maximum): LC35V1000BM and LC35V1000BTS-70U.
Low current drain Standby mode: 0.05 µA (typical.
) at Ta = +25°C.
: When VCC = 3.0 V 10.0 µA (maximum) at Ta = +70°C 20.0 µA (maximum) at Ta = +85°C.
Data retention voltage: 2.0 to 3.6 V.
No clock required (fully static circuits).
Input/output shared function pins, 3-st.

📁 Similar Datasheet

LC3516 - 2048 words x 8-Bits CMOS SRAM (Sanyo Electric)
LC3516A - CMOS SRAM (Sanyo Electric)
LC3516A - 2048 x 8 CMOS RAM (Sanyo Semiconductor Corporation)
LC3516D - 2048 words x 8-Bits SRAM (Sanyo Electric)
LC3517B - 2048-word x 8 bit CMOS Static RAM (Sanyo Semiconductor)
LC30 - 1500 Watt Low Capacitance Transient Voltage Suppressor (Microsemi)
LC3000 - High Performance / Low-Cost Analog Line Scan Camera (PerkinElmer Optoelectronics)
LC300W01 - WXGA TFT LCD (LG PHILIPS)

Other Datasheets by Sanyo

LC35V1000BTS-70U - Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM
LC35V256EM - 256K (32K words x 8 bits) SRAM Control pins: OE and CE
LC35V256EM-70W - 256K (32K words x 8 bits) SRAM Control pins: OE and CE
LC35V256ET-70W - 256K (32K words x 8 bits) SRAM Control pins: OE and CE
LC3514 - 1024 x 4-Bit High Speed CMOS Static RAM
LC3514A - 1024 x 4-Bit High Speed CMOS Static RAM

Published: Apr 25, 2005 |