LC35V256EM Description
ENN6303 CMOS IC LC35V256EM, ET-70W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell,.
LC35V256EM Key Features
- Supply voltage range: 3.0 to 3.6 V
- Access time: 70 ns (maximum)
- Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C)
- Operating temperature: -10 to +70°C
- Data retention voltage: 2.0 to 3.6 V
- All I/O levels: CMOS patible (0.8 VCC, 0.2 VCC)
- Input/output shared function pins, 3-state output pins
- No clock required (fully static circuits)