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2N6100 Datasheet Silicon Power Transistor

Manufacturer: SavantIC

Overview: SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6098 VCBO Collector-base voltage 2N6099 2N6100 2N6101 2N6098 VCEO Collector-emitter voltage 2N6099 2N6100 2N6101 VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 70 70 80 80 70 70 80 80 8 10 75 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6098 2N6099 2N6098 2N6099 2N6100 2N6101 SYMBOL CONDITIONS MIN 70 70 TYP.

MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 2N6100 2N6101 80 80 IC=5A;IB=0.5A IC=10A;IB=2.5A IC=4A ;

VCE=4V 1.3 2N6100/6101 IC=5A ;

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