2SC2516 Overview
Description
With TO-220C package - Low collector saturation voltage - Wide area of safe operation APPLICATIONS - Switching regulators - DC-DC converters - High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 150 60 12 5 10 2.5 1.5 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=3.0A ; IB=0;L=1mH IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=100V ;IE=0 VCE=100V; VBE=-1.5V Ta=125 VEB=10V ;IC=0 IC=0.2 A ; VCE=5V IC=3 A ; VCE=5V 40 40 MIN 60 2SC2516 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 TYP. MAX UNIT V 0.6 1.5 10 10 1 10 V V µA µA mA µA 200 Switching times ton ts tf Turn-on time Storage time Fall time IC=3A; IB1=-IB2=0.3A RL=17@; VCC=50V 0.5 2.5 0.5 µs µs µs hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2516 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3.
