STT2602
STT2602 is N-Channel Enhancement Mode Power MosFET manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente 6.3A, 20V,RDS(ON) 34m£[
N-Channel Enhancement Mode Power Mos.FET
RoHS pliant Product
Description
The STT2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The STT2602 is universally used for all mercial-industrial applications.
Features
- Low On-Resistance
- Capable of 2.5V Gate Drive
D D 5 S 4 6
REF. A A1 A2 c D E E1
Date Code
1 D 2 D 3 G
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
Absolute Maximum...
