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STT2604 - N-Channel Enhancement Mode Power MosFET

General Description

The STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

The STT2604 is universally used for all commercial-industrial applications.

Key Features

  • Lower Gate Charge.
  • Fast Switching Characteristic.
  • Small Footprint & Low Profile Package D D 5 S 4 D 6 REF. A A1 A2 c D E E1 Date Code 2604 G 1 D 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings www. DataSheet4U. com Parameter Symbol VDS VGS Ratings 30 ± 20 Unit V V A A A W W/ C o o Drain-Source Volta.

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Datasheet Details

Part number STT2604
Manufacturer SeCoS Halbleitertechnologie GmbH
File Size 634.93 KB
Description N-Channel Enhancement Mode Power MosFET
Datasheet download datasheet STT2604 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT2604 Elektronische Bauelemente 5.5A, 3 0V,RDS(ON) 45m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2604 is universally used for all commercial-industrial applications. Features * Lower Gate Charge * Fast Switching Characteristic * Small Footprint & Low Profile Package D D 5 S 4 D 6 REF. A A1 A2 c D E E1 Date Code 2604 G 1 D 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings www.DataSheet4U.