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STT2622 - N-Channel Enhancement Mode Power MosFET

General Description

The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

The SOT-26 is universally used for all commercial-industrial applications.

Key Features

  • RoHS Compliant.
  • Low Gate Charge.
  • Surface Mount Package D1 S1 5 D2 4 D1 D2 6 REF. A A1 A2 c D E E1 Date Code 2622 G1 G2 1 G1 2 S2 3 G2 S1 S2 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter www. DataSheet4U. com Drain-Source Voltage Symbol VDS VGS Ratings 50 ±20 Unit V V mA mA A W W/ C o o Gate-Sour.

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Datasheet Details

Part number STT2622
Manufacturer SeCoS Halbleitertechnologie GmbH
File Size 519.42 KB
Description N-Channel Enhancement Mode Power MosFET
Datasheet download datasheet STT2622 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT2622 Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8£[ N-Channel Enhancement Mode Power Mos.FET Description The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SOT-26 is universally used for all commercial-industrial applications. Features * RoHS Compliant * Low Gate Charge * Surface Mount Package D1 S1 5 D2 4 D1 D2 6 REF. A A1 A2 c D E E1 Date Code 2622 G1 G2 1 G1 2 S2 3 G2 S1 S2 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter www.DataSheet4U.