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BCX19 Datasheet PDF

SeCoS Halbleitertechnologie GmbH BCX19

NPN Silicon Plastic-Encapsulate Transistor

Part No. BCX19
Datasheet BCX19 Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description NPN Silicon Plastic-Encapsulate Transistor
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BCX19 datasheet page 1 preview

FEATURES

n Power dissipation PCM : 0.225 W (Tamb=25OC) n Collector Current ICM : 0.5 A n Collector-base voltage V(BR)CBO : 50 V n Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150OC n RoHS Compliant Product 2. 9 1 2 3 1. 9 0. 95 1. 0 SOT-23 Collector 3 1 Base 2 Emitter 2. 4 1. 3 0. 4 0. 95 Unit: m i l l i m e t e r

ELECTRICAL CHARACTERISTICS

(Tamb=25oC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(on ) Test conditions Ic= 10µA, IE=0 Ic =10 mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VCE=20V, IB=0 VEB= 5V, IC=0 VCE=1V, IC=100mA IC=500mA,IB= 50mA I C=500mA,VCE=1V MIN 50 45 5 100 TYP MAX UNIT V V V 0.1 µA 0.1 µA 10 µA 600 0.62 V 1.2 V MARKING BCX19 = U1 01-Jun-2002 Rev.