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BCX19 - NPN Silicon Plastic-Encapsulate Transistor

Key Features

  • n Power dissipation PCM : 0.225 W (Tamb=25OC) n Collector Current ICM : 0.5 A n Collector-base voltage V(BR)CBO : 50 V n Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150OC n RoHS Compliant Product 2. 9 1 2 3 1. 9 0. 95 1. 0 SOT-23 Collector 3 1 Base 2 Emitter 2. 4 1. 3 0. 4 0. 95 Unit: m i l l i m e t e r.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente BCX19 NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free FEATURES n Power dissipation PCM : 0.225 W (Tamb=25OC) n Collector Current ICM : 0.5 A n Collector-base voltage V(BR)CBO : 50 V n Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150OC n RoHS Compliant Product 2. 9 1 2 3 1. 9 0. 95 1. 0 SOT-23 Collector 3 1 Base 2 Emitter 2. 4 1. 3 0. 4 0.