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Elektronische Bauelemente
RoHS Compliant Product
MMBT4401W
NPN Silicon Switching Transistor
COLLECTOR 3
1 BASE
2 EMITTER
3
1 2
A L
Top View
BS
VG
C
D
H K
J
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1)
TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT4401W = K3X, 2X
Symbol
VCEO VCBO VEBO
IC
Value 40 60 6.0 600
Symbol PD
RqJA PD
RqJA TJ, Tstg
Max 200
1.8 556 200
2.
MMBT4401W Datasheet
