SDT4A6N10ESV-C Description
Elektronische Bauelemente SDT4A6N10ESV-C 4.6A, 100V, RDS(ON) 59mΩ N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free.
SDT4A6N10ESV-C is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH .
| Part Number | Description |
|---|---|
| SDT1216 | P-Channel MOSFET |
| SDT2P02 | Dual P-Channel MOSFET |
| SDT2P02-C | Dual-P Enhancement Mode MOSFET |
| SDT2P03-C | Dual-P Enhancement Mode MOSFET |
| SDT3005 | N-Channel MOSFET |
Elektronische Bauelemente SDT4A6N10ESV-C 4.6A, 100V, RDS(ON) 59mΩ N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free.