Datasheet4U Logo Datasheet4U.com

SDT4A6N10ESV-C - N-Ch Enhancement Mode Power MOSFET

Key Features

  • The SDT4A6N10ESV-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter.

📥 Download Datasheet

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SDT1216 P-Channel MOSFET
SDT2P02 Dual P-Channel MOSFET
SDT2P02-C Dual-P Enhancement Mode MOSFET
SDT2P03-C Dual-P Enhancement Mode MOSFET
SDT3005 N-Channel MOSFET
SDT3A5N06-C N-Channel Enhancement Mode Power MOSFET
SDT3N03 Dual-N Enhancement Mode MOSFET
SDT3P02-C Dual-P Enhancement Mode MOSFET
SDT517 Dual MOSFET
SDT7A5P03-C P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SDT4A6N10ESV-C 4.6A, 100V, RDS(ON) 59mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free FEATURES The SDT4A6N10ESV-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SDT4A6N10ESV-C meet the RoHS and Green Product requirement with full function reliability approved. DFN2x2-6J FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available  ESD Protection MARKING 4A6N10 .  = Date code PACKAGE INFORMATION Package MPQ DFN2x2-6J 3K Leader Size 7 inch REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.