SMG2318N Description
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
- Part: SMG2318N
- Manufacturer: SeCoS Halbleitertechnologie GmbH
- Size: 469.24 KB
Related SeCoS Halbleitertechnologie GmbH Datasheets
| Part Number | Description |
|---|---|
| SMG2310 | N-Channel MosFET |
| SMG2310A | N-Channel MosFET |
| SMG2310B | N-Channel MosFET |
| SMG2310N | N-Channel MosFET |
| SMG2313 | P-Channel MosFET |