SSG13P03 Description
The SSG13P03 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a mon drain arrangement to from a bidirectional blocking switch.
SSG13P03 Key Features
- 55 ~ 150
- 13 A, -30 V, RDS(ON) 15 mΩ P-Ch Enhancement Mode Power MOSFET
- 2.5 V VDS=VGS, ID = -250µA
- S VDS= -5V, ID= -8A
- 1 µA VDS= -24V,VGS=0
- ID= -8A nC VDS= -15V
- VGS=0V
- pF VDS= -15V
- Gate Resistance
- 9 18 Ω f=1.0MHz