Download SSG4490N Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SSG4490N
SSG4490N is N-Channel Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente 5.2 A, 100 V, RDS(ON) 78 m N-Ch Enhancement Mode Power MOSFET DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. Features - Low RDS(on) provides higher efficiency and extends battery life. - Low thermal impedance copper leadframe SOIC-8 saves board space. - Fast switching speed. - High performance trench technology. PACKAGE INFORMATION Package SOP-8 2.5K Leader Size 13’ inch SOP-8 A HG LD M JK F REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10...