SSG4842N Overview
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SSG4842N Key Features
- Typ. Static
- Dynamic
- 25 6 9 20 13 82 43
| Part number | SSG4842N |
|---|---|
| Datasheet | SSG4842N_SeCoS.pdf |
| File Size | 136.58 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | N-Ch Enhancement Mode Power MOSFET |
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These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
See all SeCoS Halbleitertechnologie GmbH datasheets
| Part Number | Description |
|---|---|
| SSG4841P | P-Ch Enhancement Mode Power MOSFET |
| SSG4800J-C | Dual-N Enhancement Mode Power MOSFET |
| SSG4801 | Dual-P Enhancement Mode Power MOSFET |
| SSG4825P | P-Channel Mode Power MOSFET |
| SSG4825PE | P-Channel Mode Power MOSFET |
| SSG4835P | P-Ch Enhancement Mode Power MOSFET |
| SSG4835PR-C | P-Ch Enhancement Mode Power MOSFET |
| SSG4874N | N-Channel Mode Power MOSFET |
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