SSG4842N Description
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SSG4842N Key Features
- Typ. Static
- Dynamic
- 25 6 9 20 13 82 43
- Part: SSG4842N
- Manufacturer: SeCoS Halbleitertechnologie GmbH
- Size: 136.58 KB
Related SeCoS Halbleitertechnologie GmbH Datasheets
| Part Number | Description |
|---|---|
| SSG4841P | P-Ch Enhancement Mode Power MOSFET |
| SSG4800J-C | Dual-N Enhancement Mode Power MOSFET |
| SSG4801 | Dual-P Enhancement Mode Power MOSFET |
| SSG4825P | P-Channel Mode Power MOSFET |
| SSG4825PE | P-Channel Mode Power MOSFET |