SSG4N10E Description
The SSG4N10E provide the designer with the best bination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
SSG4N10E is Dual-N Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
| Part Number | Description |
|---|---|
| SSG4224 | N-Ch Enhancement Mode Power MOSFET |
| SSG4226 | N-Channel MOSFET |
| SSG4228 | Dual-N Enhancement Mode Power MOSFET |
| SSG4362N | N-Ch Enhancement Mode Power MOSFET |
| SSG4390N | N-Ch Enhancement Mode Power MOSFET |
The SSG4N10E provide the designer with the best bination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.