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SSG4N10E Datasheet Dual-n Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SSG4N10E 4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen &.

General Description

The SSG4N10E provide the designer with the best bination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

Key Features

  • Low on-resistance Simple Drive Requirement Double-N MosFET Package SOP-8 LD M AC N JK HG B FE.

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